Due to its high output power, the 300 W MRF6P3300H device allows power amplifier manufacturers to reduce system-level costs because fewer RF transistors are needed to achieve a given power target.

In order to develop the necessary technology, the project Magellan — High Efficiency mm-Wave GaN Transistor High Power Amplifier for GEO and LEO Active Antenna Application — was launched in 2024.

The APN228 and APN229 power amplifiers were developed with the company’s proprietary GaN high-electron mobility transistor (HEMT) power process and provide unmatched saturated output power of 13 ...

The amp features McIntosh’s new DualView Power Output Meter which stacks two meters in a single window. One of the meters displays the output of the 300-Watt vacuum tube section while the other ...

The M/A-COM MAPRST0912-50 is a 50Wpk Class C, silicon bipolar pulse power transistor designed specifically for driver stages in pulse power amplifier applications over the 960 to 1215 MHz bandwidth.

"This work opens a new realm in transistor research, adding a valuable member to the family of hot carrier transistors and showing broad prospects for their application in future high-performance ...

Ampleon has announced a rugged high-power transistor for broadcast across 88 – 108MHz for FM radio applications. The device, called BLF189XRA, can deliver 1,600W CW (continuous wave transmission) from ...

While LDMOS power devices are going to low-cost plastic packages, GaAs HBTs are migrating to larger wafers to cut cost. With a growing market for cellular and personal communications services (PCS ...

[Paulo] just tipped us about an Excel based high frequency transistor amplifier calculator he made. We’re guessing that some of our readers already are familiar with these class A ampl… ...