(MENAFN- Ameliorate Solutions) The Global Schottky Barrier Rectifier Diode Market report provides an in-depth analysis of the key market insights, its future trends, and developments, profiles of ...

The SBR10M100P5Q and SBR8M100P5Q employ patented and proprietary technology and have been designed to significantly reduce power loss and lower operating temperatures in automotive applications. When ...

The 178-product lineup assembled by ROHM helps contribute to lower power consumption, smaller size, and higher reliability in a wider range of applications. A diode is one of the basic components ...

KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation and Toshiba Corporation (collectively “Toshiba”) have developed an SiC metal oxide semiconductor field effect ...

New packaging design provides 50% reduction in thermal resistance compared to conventional USC packaging TOKYO--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation (“Toshiba”) announces ...

Vishay Intertechnology, Inc. today expanded its offering of TMBS® Trench MOS Barrier Schottky rectifiers with 12 new 45 V devices in three power package options that feature a wide range of current ...

The semiconductor industry has a well-established history of “smaller, faster, and cheaper.” Improving performance and reducing device cost while shrinking packaging size is fundamental to virtually ...

Planar Schottky diodes serve as output rectifiers and ORing functions in redundant (n+1) power supplies. However, developers are demanding improved forward voltage drop (V F) and reverse leakage ...

Figure 1: Diagram of the experimental set-up and the symmetry of the magnetic field. We conclude that this Schottky diode works as a voltage-dependent ‘magnetic field pump’. The most straightforward ...

For hard-switched power topologies, Infineon is planning a 100V GaN transistors with a integrated Schottky diode. “Due to the lack of body diode in hard-switching applications, GaN-based topologies ...