This paper analyzes the intrinsic capacitance of enhancement-mode (e-mode) Gallium Nitride-based High Electron Mobility Transistor (GaN HEMTs). The intrinsic capacitance was measured using Ciss (input ...

Accurate modeling of nonlinear capacitance is significant for physics-based compact modeling of GaN high-electric-mobility transistor (HEMT). For conventional methods, physical modeling of the ...